Picture of Yeghishe
Awschalom Group

Yeghishe Tsaturyan

  • Postdoctoral Scholar

  • Contact: ytsaturyan@uchicago.edu
  • Office Location:
    Eckhardt Research Center 239
    5640 South Ellis Avenue
    Chicago, IL 60637

Pronouns: he/him

Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness

J. A. Michaels, N. Delegan, Y. Tsaturyan, J. R. Renzas, D. D. Awschalom, J. G. Eden, F. J. Heremans. Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness. 2023. Journal of Vacuum Science & Technology A 41, 3, 032607. 10.1116/6.0002447