Pronouns: he/him
Microwave-Based Quantum Control and Coherence Protection of Tin-Vacancy Spin Qubits in a Strain-Tuned Diamond-Membrane Heterostructure
X. Guo, A. M. Stramma, Z. Li, W. G. Roth, B. Huang, Y. Jin, R. A. Parker, J. A. Martínez, N. Shofer, C. P. Michaels, C. P. Purser, M. H. Appel, E. M. Alexeev, T. Liu, A. C. Ferrari, D. D. Awschalom, N. Delegan, B. Pingault, G. Galli, F. J. Heremans, M. Atatüre, A. A. High. Microwave-Based Quantum Control and Coherence Protection of Tin-Vacancy Spin Qubits in a Strain-Tuned Diamond-Membrane Heterostructure. 2023. Phys. Rev. X 13, 041037. 10.1103/PhysRevX.13.041037
Quantifying the limits of controllability for the nitrogen-vacancy electron spin defect
P. Kairys, J. C. Marcks, N. Delegan, J. Zhang, D. D. Awschalom, F. J. Heremans. Quantifying the limits of controllability for the nitrogen-vacancy electron spin defect. 2023. arXiv:2309.03120.
Magnon-mediated qubit coupling determined via dissipation measurements
M. Fukami, J. C. Marcks, D. R. Candido, L. R. Weiss, B. Soloway, S. E. Sullivan, N. Delegan, F. J. Heremans, M. E. Flatté, D. D. Awschalom. Magnon-mediated qubit coupling determined via dissipation measurements. 2023. arXiv:2308.11710.
Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure
X. Guo, A. M. Stramma, Z. Li, W. G. Roth, B. Huang, Y. Jin, R. A. Parker, J. A. Martínez, N. Shofer, C. P. Michaels, C. P. Purser, M. H. Appel, E. M. Alexeev, T. Liu, A. C. Ferrari, D. D. Awschalom, N. Delegan, B. Pingault, G. Galli, F. J. Heremans, M. Atatüre, A. A. High. Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure. 2023. arXiv:2307.11916.
Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies
X. Guo, M. Xie, A. Addhya, A. Linder, U. Zvi, T. D. Deshmukh, Y. Liu, I. N. Hammock, Z. Li, C. T. DeVault, A. Butcher, A. P. Esser-Kahn, D. D. Awschalom, N. Delegan, P. C. Maurer, F. J. Heremans, A. A. High. Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies. 2023. arXiv:2306.04408.
Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness
J. A. Michaels, N. Delegan, Y. Tsaturyan, J. R. Renzas, D. D. Awschalom, J. G. Eden, F. J. Heremans. Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness. 2023. Journal of Vacuum Science & Technology A 41, 3, 032607. 10.1116/6.0002447