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Extended spin relaxation times of optically addressed telecom defects in silicon carbide
J. Ahn, C. Wicker, N. Bitner, M. T. Solomon, B. Tissot, G. Burkard, A. M. Dibos, J. Zhang, F. J. Heremans, D. D. Awschalom. Extended spin relaxation times of optically addressed telecom defects in silicon carbide. 2024. arXiv:2405.16303