F. Joseph Heremans
Awschalom Group

F. Joseph Heremans

Pronouns: he/him

Heremans' current research focuses on engineering with diamond, including spin dynamics of nitrogen-vacancy (NV) centers, as well as transport properties. NV centers are known to have long spin coherence times at room temperature, making them an ideal candidate for quantum information processing.

Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates

C. P. Horn, C. Wicker, A. Wellisz, C. Zeledon, P. V. K. Nittala, F. J. Heremans, D. D. Awschalom, S. Guha. Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates. 2024. ACS Nano. 10.1021/acsnano.4c10978

Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies (Phys. Rev. Applied Editors' Suggestion)

J. Ahn, C. Wicker, N. Bitner, M. T. Solomon, B. Tissot, G. Burkard, A. M. Dibos, J. Zhang, F. J. Heremans, D. D. Awschalom. Extended spin relaxation times of optically addressed vanadium defects in silicon carbide at telecommunication frequencies. 2024. Phys. Rev. Applied 10.1103/PhysRevApplied.22.044078

Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies

X. Guo, M. Xie, A. Addhya, A. Linder, U. Zvi, S. Wang, X. Yu, T. D. Deshmukh, Y. Liu, I. N. Hammock, Z. Li, C. T. DeVault, A. Butcher, A. P. Esser-Kahn, D. D. Awschalom, N. Delegan, P. C. Maurer, F. J. Heremans, A. A. High. Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies. 2024. Nat. Comm. 10.1038/s41467-024-53150-3

Quantum spin probe of single charge dynamics (PRL Editors' Suggestion)

J. C. Marcks, M. Onizhuk, Y.-X. Wang, Y. Zhu, Y. Jin, B. S. Soloway, M. Fukami, N. Delegan, F. J. Heremans, A. A. Clerk, G. Galli, D. D. Awschalom. Quantum spin probe of single charge dynamics. 2024. Phys. Rev. Let. 10.1103/PhysRevLett.133.130802

Photonic-Cavity-Enhanced Laser Writing of Color Centers in Diamond

A. Addhya, V. Tyne, X. Guo, I. N. Hammock, Z. Li, M. Leung, C. T. DeVault, D. D. Awschalom, N. Delegan, F. J. Heremans, A. A. High. Photonic-Cavity-Enhanced Laser Writing of Color Centers in Diamond. 2024. Nano Lett. 10.1021/acs.nanolett.4c02639

Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts

J. Wong, M. Onizhuk, J. Nagura, A. S. Thind, J. K. Bindra, C. Wicker, G. D. Grant, Y. Zhang, J. Niklas, O. G. Poluektov, R. F. Klie, J. Zhang, G. Galli, F. J. Heremans, D. D. Awschalom, A. P. Alivisatos. Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts. 2024. Nano. Lett. 10.1021/acsnano.4c04083

Anomalous Purcell decay of strongly driven inhomogeneous emitters coupled to a cavity

M. T. Solomon, M. Koppenhöfer, C. Ji, G. Grant, I. Masiulionis, S. E. Sullivan, F. J. Heremans, S. Guha, D. D. Awschalom, A. A. Clerk, A. M. Dibos. Anomalous Purcell decay of strongly driven inhomogeneous emitters coupled to a cavity. 2024. Optica Quantum 2, 196-205. 10.1364/OPTICAQ.520843

Nanocavity-mediated Purcell enhancement of Er in TiO2 thin films grown via atomic layer deposition

C. Ji, M. T. Solomon, G. D. Grant, K. Tanaka, M. Hua, J. Wen, S. K. Seth, C. P. Horn, I. Masiulionis, M. K. Singh, S. E. Sullivan, F. J. Heremans, D. D. Awschalom, S. Guha, A. M. Dibos. Nanocavity-mediated Purcell enhancement of Er in TiO2 thin films grown via atomic layer deposition. 2024. ACS Nano. 10.1021/acsnano.3c09878

Guiding Diamond Spin Qubit Growth with Computational Methods

J. C. Marcks, M. Onizhuk, N. Delegan, Y.-X. Wang, M. Fukami, M. Watts, A. A. Clerk, F. J. Heremans, G. Galli, D. D. Awschalom. Guiding Diamond Spin Qubit Growth with Computational Methods. 2023. Phys. Rev. Mat. 8, 026204. 10.1103/PhysRevMaterials.8.026204

Optical and microstructural characterization of Er3+ doped epitaxial cerium oxide on silicon

G. D. Grant, J. Zhang, I. Masiulionis, S. Chattaraj, K. E. Sautter, S. E. Sullivan, R. Chebrolu, Y. Liu, J. B. Martins, J. Niklas, A. M. Dibos, S. Kewalramani, J. W. Freeland, J. Wen, O. G. Poluektov, F. J. Heremans, D. D. Awschalom, S. Guha. Optical and microstructural characterization of Er3+ doped epitaxial cerium oxide on silicon. 2023. arXiv:2309.16644

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