Office Location:
William Eckhardt Research Center (251)
Ananya was born and raised in Buffalo, New York. She started as an undergraduate at the University of Chicago in Autumn 2018 and joined the de Pablo lab during her first-year. Ananya is currently studying molecular engineering and linguistics. During her free time, she enjoys singing, playing violin, composing, running, and doing yoga.
Silicon Carbide (SiC) is a popular material used for high-power electronics. The solid-state spin defects and host crystals are applicable for quantum information science, quantum sensing, and quantum communication. When an Si and C adjacent to one another in the crystal are removed, a divacancy complex is generated. This vacancy formation is probed with atomistic simulations, and the resulting migration pathways and charge densities are analyzed using Density Functional Theory (DFT). Studying the behavior of defects and divacancy migration using Molecular Dynamics (MD) simulations, DFT, and Machine Learning (ML) will allow for application into research in qubits.
