Manish graduated from IIT Kanpur, India from a dual degree program (B-Tech + M-Tech) in chemical engineering (2007-2012). After graduation, he worked for Taiwan Semiconductions Manufacturing Company R&D, first on process development for advanced nodes and later as an integration engineer for emerging memory technology (2012-2017).
In summer 2017, he joined the Guha group as a PhD candidate at the Pritzker School of Molecular Engineering, UChicago.
A Roadmap for Quantum Interconnects
D. D. Awschalom, H. Bernien, R. Brown, A. Clerk, E. Chitambar, A. Dibos, J. Dionne, M. Eriksson, B. Fefferman, G. Fuchs, et al. A Roadmap for Quantum Interconnects. United States. 2022. https://doi.org/10.2172/1900586. https://www.osti.gov/servlets/purl/1900586.
Purcell enhancement of erbium ions in TiO2 on silicon nanocavities
A. M. Dibos, M. T. Solomon, S. E. Sullivan, M. K. Singh, K. E. Sautter, C. P. Horn, G. D. Grant, Y. Lin, J. Wen, F. J. Heremans, S. Guha, D. D. Awschalom. Purcell enhancement of erbium ions in TiO2 on silicon nanocavities. arXiv. 2022. 2204.09859.
Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO2 Thin Films on Silicon
M. K. Singh, G. Wolfowicz, J. Wen, S. E. Sullivan, A. Prakash, A. M. Dibos, D. D. Awschalom, F. J. Heremans, S. Guha. Development of a scalable quantum memory platform -- materials science of erbium-doped TiO2 thin films on silicon. arXiv. 2022. 2202.05376.
Epitaxial Er-doped Y2O3 on silicon for quantum coherent devices
M. K. Singh, A. Prakash, G. Wolfowicz, J. Wen, Y. Huang, T. Rajh, D. D. Awschalom, T. Zhong, S. Guha. Epitaxial Er-doped Y2O3 on silicon for quantum coherent devices. APL Materials. 2020. Vol. 8, Pg. 031111. 10.1063/1.5142611.
Epitaxial Er-doped Y2O3 on Silicon for Quantum Coherent Devices
APL Materials (March, 2020)