Supratik Guha is a professor at Pritzker Molecular Engineering and senior advisor to Argonne National Laboratory’s Physical Sciences and Engineering directorate, leading the lab’s microelectronics and quantum information science strategic efforts.
Prof. Guha led the Center for Nanoscale Materials, a US Department of Energy Office of Science user facility, from 2015 to 2019. Before joining Argonne and the University of Chicago in 2015, he spent twenty years at IBM Research, where he last served as the director of physical sciences. At IBM, Guha pioneered the materials research that led to IBM’s high dielectric constant metal gate transistor, one of the most significant developments in silicon microelectronics technology. He was also responsible for initiating or significantly expanding IBM’s R&D programs in silicon photonics, quantum computing, sensor based cyberphysical systems, and photovoltaics.
Guha is a member of the National Academy of Engineering and a Fellow of the Materials Research Society, American Physical Society, a 2018 Department of Defense Vannevar Bush Faculty Fellow, and the recipient of the 2015 Prize for Industrial Applications of Physics. He received his PhD in materials science in 1991 from the University of Southern California, and a BTech in 1985 from the Indian Institute of Technology, Kharagpur. At the University of Chicago and Argonne, his interests are focused on discovery science in the area of nano-scale materials and epitaxy for energy, sensing and future information processing.
Guha Lab’s research focuses on new materials and systems for information processing and sensing. Current projects are in the following areas:
1) New oxide based materials and devices for neuromorphic architectures and non-volatile memory: This work encompasses low energy, non volatile devices for synapses and neurons that may be used in neuromorphic architectures, and devices for non-volatile memory and selector switch applications. (Collaborators: Prof. Suman Datta, Notre Dame; Dr. S. Sankaranarayanan, Argonne).
2) Epitaxial rare earth oxide based solid state qubits on silicon platforms for quantum information science: This research examines molecular beam epitaxially growth rare earth oxide heterostructures on silicon that are doped aliovalently for solid state qubit applications. Advantages of such systems are compatibility with silicon microelectronics and silicon photonics technologies, enabling direct on-chip coupling to photons, and the electronic modulation of the qubits. (Collaborators: Prof. Tien Zhong, U Chicago; Prof. D. Awschalom, U Chicago; Dr. Tijana Rajh, Argonne).
3) Cyberphysical Sensor Networks and Sensor Technologies for Water and Soil: There is enormous need for monitoring and mapping soil and water quality at high spatial and temporal resolution—it has consequences for soil and plant science, and impact on globally relevant issues such as environmental management, food security, and human health. The geochemical and microbial cycling of soils for example are not well understood and there is need for better data in order to develop more accurate models of soil. Similarily, river and lake pollution, the prediction of pollution spread, compliance enforcement, and the effect of water quality on human health and socio-economic conditions can be much better understood with better data. Our research constitutes of two parts: (i) the development of fully buried wireless underground cyberphysical sensor networks for soil monitoring and the development of mobile sensing platform based sensor networks for river and lake monitoring; and (ii), the development of better sensors using silicon photonics platforms and functionalization chemistry for difficult to measure parameters such as e. coli, total colliform and heavy metals in water, and dissolved nitrates in soil. (Collaborators: Dr. M. Ghosh, U Chicago; Prof. A. Malani, U. Chicago; Dr. S. Chary, Administrative Staff College of India, Prof. S. Sarkar, Ambedkar U, India; Prof. T. Dutta, IIT-BHU, India; Prof. A. Gupta, IIEST Shibpur, India; Dr. P. Jamiwal, ATREE, India; Dr. X. Zhang and Dr. B. Dirroll from Argonne, Dr. S. Randhawa, IBM Research; SigFox).
4) Creating single crystal films and three dimensional structures on arbitrary substrates: Commercial silicon technologies, such those used for fabricating microprocessor chips for computing and mobile telephones, or for solar cells, rely upon the high quality single crystal silicon layers on an expensive silicon wafer. If one could build high quality silicon layers on cheap substrates such as glasss, and without the need for an expensive silicon wafer, it would alter the way we do microelectronics and solar cell manufacturing. This project explores ways of using imprint crystallization and near field epitaxy to create such layers. (Collaborators: Dr. S. Sankaranarayanan, Dr. Saw Hla & Dr. N. Guisinger, all from Argonne).
In the past, Supratik pioneered the materials research that led to IBM’s high-k dielectric metal gate transistor technology, one of the most significant developments in silicon CMOS technology in decades. The processor chips in over fifty percent of smart phones and tablets sold today use nanoscale dielectrics and processes developed by Supratik. He has also worked extensively on earth abundant thin film photovoltaics, and his research group has been responsible for demonstrating the highest efficiency vacuum deposited Cu2ZnSn(S,Se)4 solar cells, and the first tandem chalcogenide/perovskite solar cells to date. As a manager at IBM he has had significant experience developing inter-company joint R&D alliances and has initiated or expanded several successful programs such as silicon photonics, quantum computing, carbon electronics, photovoltaics, and sensor based analytics.
Purcell enhancement of erbium ions in TiO2 on silicon nanocavities
A. M. Dibos, M. T. Solomon, S. E. Sullivan, M. K. Singh, K. E. Sautter, C. P. Horn, G. D. Grant, Y. Lin, J. Wen, F. J. Heremans, S. Guha, D. D. Awschalom. Purcell enhancement of erbium ions in TiO2 on silicon nanocavities. 2022. Nano Lett. 22, 16, 6530–6536. 10.1021/acs.nanolett.2c01561
A Roadmap for Quantum Interconnects
D. D. Awschalom, H. Bernien, R. Brown, A. Clerk, E. Chitambar, A. Dibos, J. Dionne, M. Eriksson, B. Fefferman, G. Fuchs, et al. A Roadmap for Quantum Interconnects. United States. 2022. https://doi.org/10.2172/1900586. https://www.osti.gov/servlets/purl/1900586.
Aerosol Filtration Efficiency of Common Fabrics Used in Respiratory Cloth Masks
ACS nano (2020) https://pubs.acs.org/doi/abs/10.1021/acsnano.0c03252
Epitaxial Er-doped Y2O3 on silicon for quantum coherent devices
M. K. Singh, A. Prakash, G. Wolfowicz, J. Wen, Y. Huang, T. Rajh, D. D. Awschalom, T. Zhong, S. Guha. Epitaxial Er-doped Y2O3 on silicon for quantum coherent devices. APL Materials. 2020. Vol. 8, Pg. 031111. 10.1063/1.5142611.
Epitaxial Er-doped Y2O3 on Silicon for Quantum Coherent Devices
APL Materials (March, 2020)
Vanadium Dioxide Circuits Emulate Neurological Disorders
Jianqiang Lin, Supratik Guha, Shriram Ramanathan. Vanadium Dioxide Circuits Emulate Neurological Disorders. Frontiers in Neuroscience. 2018. Vol. 12, Pg. 856.
Closed loop controlled precision irrigation sensor network
Levente Klein, Hendrik Hamann, Nigel Hinds, Supratik Guha, Luis Sanchez, Brent Sams, Nick Dokoozlian. Closed loop controlled precision irrigation sensor network. IEEE Internet of Things Journal. 2018. Vol. DOI: 10.1109/JIOT.2018.2865527.
Electrically-Driven Insulator-Metal Transition Effect Based Devices, Part II:Transient Characteristi
J. Lin, S. Ramanathan, and S. Guha. Electrically-Driven Insulator-Metal Transition Effect Based Devices, Part II:Transient Characteristi. IEEE Transactions on Electron Devices. 2018. Vol. 65 (9), Pg. p.3989.
Predictive framework for electrode selection enables silicon compatible Sn-based resistive switching
S. Sonde, B.Chakrabarti, Y. Liu, K. Sasikumar, J. Lin, L. Stan, R. Divan, L. E. Ocola, D. Rosenmann, P. Choudhury, K. Ni, S. Sankaranarayanan, S. Datta and S. Guha. Predictive framework for electrode selection enables silicon compatible Sn-based resistive switching. Nanoscale. 2018. Vol. 10, Pg. 9441-9449.
Electrically-Driven Insulator-Metal Transition Effect Based Devices, Part I: the Electro-Thermal Mod
J. Lin, S. Ramanathan, and S. Guha. Electrically-Driven Insulator-Metal Transition Effect Based Devices, Part I: the Electro-Thermal Mod. IEEE Transactions on Electron Devices. 2018. Vol. 65 (9), Pg. p.3982.