Researchers at the IME have demonstrated that the quantum spin states of color centers (defects) in commercially available SiC wafers can be coherently controlled with on-chip electric fields using conventional electrical gating technologies. Moreover, they have used this result to electrically drive and optically image gigahertz-frequency electric fields in a semiconductor. These findings could ultimately lead to the scalable quantum control over electron spins in a dense array of qubits for quantum computation and communication.
A special figure adapted from the publication was chosen as the cover image for Physical Review Letters, Volume 112, Issue 8.
Read the full publication at APS Physics.
Electrically driven spin resonance in silicon carbide color centers by P. V. Klimov, A. L. Falk, B. B. Buckley, et al.