Awschalom Group: Publications Latest

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Preprints

  1. “Enhanced stability of defect-based qubits in quantum wells,” V. Ivády, J. Davidsson, A. L. Falk, P. V. Klimov, N. T. Son, D. D. Awschalom, I. A. Abrikosov, A. Gali. arXiv, 1905.11801, 2019

  2. “Electrical and optical control of single spins integrated in scalable semiconductor devices,” C. P. Anderson, A. Bourassa, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. L. Crook, H. Abe, J. U. Hassan, N. T. Son, T. Ohshima, D. D. Awschalom. arXiv, 1906.08328, 2019

  3. “Electrically driven optical interferometry with spins in silicon carbide,” K. C. Miao, A. Bourassa, C. P. Anderson, S. J. Whiteley, A. L. Crook, S. L. Bayliss, G. Wolfowicz, G. Thiering, P. Udvarhelyi, V. Ivady, H. Abe, T. Ohshima, A. Gali, D. D. Awschalom. arXiv, 1905.12780, 2019

  4. “Spatiotemporal mapping of photocurrent in a monolayer semiconductor using a diamond quantum sensor,” B. B. Zhou, P. C. Jerger, K.-H. Lee, M. Fukami, F. Mujid, J. Park, D. D. Awschalom. arXiv, 1903.09287, 2019

Recent Publications

  1. “Correlating dynamic strain and photoluminescenceof solid-state defects with stroboscopic x-raydiffraction microscopy,” S. J. Whiteley, F. J. Heremans, G. Wolfowicz, D. D. Awschalom, M. V. Holt. Nat. Commun., 10, 3386, 2019

  2. “Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide,” G. Wolfowicz, C. P. Anderson, S. J. Whiteley, D. D. Awschalom. Appl. Phys. Lett., 115, 043105, 2019

  3. “All-optical cryogenic thermometry based on nitrogen-vacancy centers in nanodiamonds,” M. Fukami, C. G. Yale, P. Andrich, X. Liu, F. J. Heremans, P. F. Nealey, D. D. Awschalom. Phys. Rev. Applied, 12, 014042, 2019

  4. “Simple non-galvanic flip-chip integration method for hybrid quantum systems,” K. J. Satzinger, C. R. Conner, A. Bienfait, H.-S. Chang, M.-H. Chou, A. Y., Cleland, E. Dumur, J. Grebel, G. A. Peairs, R. G. Povey, S. J. Whiteley, Y. P. Zhong, D. D. Awschalom, D. I. Schuster, A. N. Cleland. Appl. Phys. Lett., 114, 173501, 2019

  5. “Spin-phonon interactions in silicon carbide addressed by Gaussian acoustics,” S. J. Whiteley, G. Wolfowicz, C. P. Anderson, A. Bourassa, H. Ma, M. Ye, G. Koolstra, K. J. Satzinger, M. V. Holt, F. J. Heremans, A. N. Cleland, D. I. Schuster, G. Galli, D. D. Awschalom. Nature Physics, 15, 490–495, 2019

  6. “Quantum control of surface acoustic-wave phonons,” K. J. Satzinger, Y. P. Zhong, H.-S. Chang, G. A. Peairs, A. Bienfait, M.-H. Chou, A. Y. Cleland, C. R. Conner, E. Dumur, J. Grebel, I. Gutierrez, B. H. November, R. G. Povey, S. J. Whiteley, D. D. Awschalom, D. I. Schuster, A. N. Cleland. Nature, 563, 661-665, 2018

  7. “Atomic layer deposition of titanium nitride for quantum circuits,” (Featured on cover) A. Shearrow, G. Koolstra, S. J. Whiteley, N. Earnest, P. S. Barry, F. J. Heremans, D. D. Awschalom, E. Shirokoff, D. I. Schuster. Appl. Phys. Lett., 113, 212601, 2018

  8. “National Science Foundation-Sponsored Workshop Report on Midscale Instrumentation to Accelerate Progress in Quantum Materials,” Collin Broholm, David D. Awschalom, Daniel S. Dessau, and Laura H. Greene, September 2018. Available at

  9. “Quantum technologies with optically interfaced solid-state spins,” D. D. Awschalom, R. Hanson, J. Wrachtrup, B. B. Zhou. Nat. Photonics, 12, 516-527, 2018

  10. “Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies,” S. O. Hruszkewycz, S. Maddali, C. P. Anderson, W. Cha, K. C. Miao, M. J. Highland, A. Ulvestad, D. D. Awschalom, F. J. Heremans. Phys. Rev. Materials, 2, 086001, 2018

  11. “Electrometry by optical charge conversion of deep defects in 4H-SiC,” G. Wolfowicz, S. J. Whiteley, D.D. Awschalom. Proc. Natl. Acad. Sci., 201806998, 2018

  12. “Microscale resolution thermal mapping using a flexible platform of patterned quantum sensors,” P. Andrich, J. Li, X. Liu, F. J. Heremans, P. F. Nealey, D. D. Awschalom. Nano Lett., 2018

  13. “Opportunities for Basic Research for Next-Generation Quantum Systems,” David Awschalom and Hans Christen, Chairs, Department of Energy, Office of Basic Energy Sciences, 2018. Available at

  14. “Stark tuning and electrical charge state control of single divacancies in silicon carbide,” (Editor's Pick) C. F. de las Casas, D. J. Christle, J. Hassan, T. Ohshima, N. T. Son, D. D. Awschalom. Appl. Phys. Lett., 111, 262403, 2017

  15. “Optical charge state control of spin defects in 4H-SiC,” G. Wolfowicz, C. P. Anderson, A. L. Yeats, S. J. Whiteley, J. Niklas, O. G. Poluektov, F. J. Heremans, D. D. Awschalom. Nature Communications, 8, 1876, 2017

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